Patent Assignment Details
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| Reel/Frame: | 011364/0469 | |
| Pages: | 3 |
| | Recorded: | 12/11/2000 | | |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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NONE
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Issue Dt:
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Application #:
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09734837
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Filing Dt:
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12/11/2000
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Publication #:
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Pub Dt:
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06/13/2002
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Title:
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Method of forming tungsten nitride layer as metal diffusion barrier in gate structure of MOSFET device
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Assignee
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| SCIENCE-BASED INDUSTRIAL PARK |
| NO. 123, PARK AVE., RD. III |
| HSINCHU, TAIWAN R.O.C |
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Correspondence name and address
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THOMAS, KAYDEN, HORSTEMEYER ET AL
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DANIEL R. MCCLURE
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100 GALLERIA PARKWAY, SUITE 1750
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ATLANTA, GA 30339-5948
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