Patent Assignment Details
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Reel/Frame: | 009457/0482 | |
| Pages: | 3 |
| | Recorded: | 09/10/1998 | | |
Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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10/03/2000
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Application #:
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09151202
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Filing Dt:
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09/10/1998
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Title:
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IN SITU, ONE STEP, FORMATION OF SELECTIVE HEMISPHERICAL GRAIN SILICON LAYER, AND A NITRIDE - OXIDE DIELECTRIC CAPACITOR LAYER, FOR A DRAM APPLICATION
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Assignee
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SCIENCE-BASED INDUSTRIAL PARK |
123, PARK AVE. - 3RD |
HSIN-SHU, TAIWAN |
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Correspondence name and address
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GEORGE O. SAILE
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20 MCINTOSH DRIVE
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POUGHKEEPSIE, NY 12603
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