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Reel/Frame:010864/0487   Pages: 3
Recorded: 06/09/2000
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
Issue Dt:
08/28/2001
Application #:
09591846
Filing Dt:
06/12/2000
Title:
Method of reducing the roughness of a gate insulator layer after exposure of the gate insulator layer to a threshold voltage implantation procedure
Assignors
1
Exec Dt:
05/17/2000
2
Exec Dt:
05/17/2000
Assignee
1
SCIENCE-BASED INDUSTRIAL PARK
121 PARK AVE. 3
HSIN-CHU, TAIWAN R.O.C
Correspondence name and address
GEORGE O. SAILE
STEPHEN B. ACKERMAN
20 MCINTOSH DRIVE
POUGHKEEPSIE NY 12603

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