Patent Assignment Details
NOTE:Results display only for issued patents and published applications.
For pending or abandoned applications please consult USPTO staff.
|
Reel/Frame: | 007830/0491 | |
| Pages: | 3 |
| | Recorded: | 12/15/1995 | | |
Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
|
Total properties:
1
|
|
Patent #:
|
|
Issue Dt:
|
07/08/1997
|
Application #:
|
08573960
|
Filing Dt:
|
12/15/1995
|
Title:
|
METHOD OF FORMING GATE OXIDE FOR FIELD EFFECT TRANSISTOR
|
|
Assignee
|
|
|
SCIENCE-BASED INDUSTRIAL |
NO. 1, CREATION RD. 1 |
HSIN-CHU CITY, TAIWAN R.O.C |
|
Correspondence name and address
|
|
BRUMBAUGH, GRAVES, DONOHUE & RAYMOND
|
|
RONALD B. HILDRETH
|
|
30 ROCKEFELLER PLAZA, 44TH FLOOR
|
|
NEW YORK, NY 10112
|
Search Results as of:
06/21/2024 10:58 AM
If you have any comments or questions concerning the data displayed,
contact
PRD / Assignments at 571-272-3350. v.2.6
Web interface last modified:
August 25, 2017 v.2.6
|