Patent Assignment Details
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| Reel/Frame: | 062359/0520 | |
| Pages: | 4 |
| | Recorded: | 01/12/2023 | | |
| Attorney Dkt #: | TSMP20214530US01 |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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NONE
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Issue Dt:
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Application #:
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18152601
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Filing Dt:
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01/10/2023
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Publication #:
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Pub Dt:
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10/05/2023
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Title:
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Semiconductor Device having Doped Gate Dielectric Layer and Method for Forming the Same
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Assignee
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| 8, LI-HSIN RD. 6, HSINCHU SCIENCE PARK |
| HSINCHU, TAIWAN 300-78 |
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Correspondence name and address
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SLATER MATSIL, LLP
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17950 PRESTON RD., SUITE 1000
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DALLAS, TX 75252
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05/29/2024 04:38 PM
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