Patent Assignment Details
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| Reel/Frame: | 018104/0530 | |
| Pages: | 3 |
| | Recorded: | 07/13/2006 | | |
| Attorney Dkt #: | 2557-000440/US |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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02/17/2009
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Application #:
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11485523
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Filing Dt:
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07/13/2006
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Publication #:
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Pub Dt:
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02/01/2007
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Title:
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METHOD OF FORMING A ZRO2 THIN FILM USING PLASMA ENHANCED ATOMIC LAYER DEPOSITION AND METHOD OF FABRICATING A CAPACITOR OF A SEMICONDUCTOR MEMORY DEVICE HAVING THE THIN FILM
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Assignee
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| 416 MAETAN-DONG, YEONGTONG-GU |
| SUWON-SI, GYEONGGI-DO, KOREA, REPUBLIC OF |
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Correspondence name and address
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HARNESS, DICKEY & PIERCE, P.L.C.
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P.O. BOX 8910
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RESTON, VA 20195
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