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Reel/Frame:027960/0568   Pages: 11
Recorded: 03/30/2012
Conveyance: RELEASE BY SECURED PARTY (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
Issue Dt:
02/05/2008
Application #:
10544413
Filing Dt:
08/03/2005
Publication #:
Pub Dt:
06/22/2006
Title:
METHOD OF MANUFACTURING MOS TRANSISTORS WITH GATE ELECTRODES FORMED IN A PACKET OF METAL LAYERS DEPOSITED UPON ONE ANOTHER
Assignors
1
Exec Dt:
03/30/2012
2
Exec Dt:
03/30/2012
Assignee
1
HIGH TECH CAMPUS 60
EINDHOVEN, NETHERLANDS 5656 AG
Correspondence name and address
DAVID L. SCHAEFFER
411 EAST PLUMERIA DRIVE, MS41
NXP SEMICONDUCTORS, IP&L
SAN JOSE, CA 95134

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