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Reel/Frame:011525/0580   Pages: 6
Recorded: 02/09/2001
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
Issue Dt:
02/12/2002
Application #:
09649027
Filing Dt:
08/28/2000
Title:
METHOD OF MAKING TUNGSTEN GATE MOS TRANSISTOR AND MEMORY CELL BY ENCAPSULATING
Assignors
1
Exec Dt:
01/26/2001
2
Exec Dt:
01/26/2001
3
Exec Dt:
01/31/2001
4
Exec Dt:
01/26/2001
Assignees
1
P.O. BOX 3453
ONE AMD PLACE
SUNNYVALE, CALIFORNIA 94088
2
P.O. BOX 3453
1-1 KAMIKODANAKA 4-CHOME, NAKAHARA-KU, KAWASAKI-SHI
KANAGAWA-KEN, JAPAN
Correspondence name and address
MCDERMOTT, WILL & EMERY
JOHN A. HANKINS
600 13TH STREET, N.W.
WASHINGTON, D.C. 20005

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