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03/02/2010
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10273184
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12/15/2009
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04/13/2004
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Title:
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SEMICONDUCTOR DEVICE HAVING A PAD METAL LAYER AND A LOWER METAL LAYER THAT ARE ELECTRICALLY COUPLED, WHEREAS APERTURES ARE FORMED IN THE LOWER METAL LAYER BELOW A CENTER AREA OF THE PAD METAL LAYER
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03/02/2010
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12/07/2004
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11/24/2009
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06/07/2005
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07/20/2006
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03/16/2010
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08/26/2005
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12/15/2009
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09/16/2005
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12/15/2009
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10/21/2005
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04/26/2007
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01/26/2010
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11/30/2005
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11/02/2006
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Title:
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03/09/2010
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12/27/2005
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10/19/2006
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NON-VOLATILE SONOS-TYPE MEMORY DEVICE
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12/22/2009
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01/20/2006
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12/08/2009
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04/05/2006
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10/11/2007
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03/16/2010
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04/27/2006
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03/08/2007
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12/01/2009
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04/27/2006
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03/01/2007
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Title:
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01/12/2010
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04/27/2006
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03/08/2007
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SEMICONDUCTOR DEVICE AND PROGRAMMING METHOD THEREFOR
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12/29/2009
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05/01/2006
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02/16/2010
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05/23/2006
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08/23/2007
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02/16/2010
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06/07/2006
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08/09/2007
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Title:
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02/16/2010
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08/30/2006
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09/20/2007
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03/16/2010
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08/30/2006
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09/27/2007
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03/09/2010
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09/27/2006
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10/04/2007
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12/15/2009
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10/03/2006
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04/17/2008
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03/02/2010
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12/06/2006
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06/12/2008
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01/12/2010
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10/31/2006
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05/15/2008
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12/01/2009
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12/20/2006
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06/26/2008
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02/23/2010
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12/20/2006
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06/26/2008
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12/22/2009
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12/20/2006
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06/26/2008
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01/05/2010
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12/19/2006
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03/02/2010
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12/26/2006
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06/26/2008
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03/02/2010
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04/30/2007
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10/30/2008
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12/01/2009
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05/07/2007
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11/13/2008
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01/12/2010
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01/26/2010
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07/03/2008
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07/13/2007
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12/08/2009
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04/16/2009
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12/20/2007
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03/20/2008
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12/01/2009
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09/25/2007
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03/27/2008
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12/15/2009
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06/11/2009
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02/09/2010
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06/11/2009
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03/16/2010
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12/21/2007
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06/25/2009
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01/12/2010
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12/28/2007
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07/02/2009
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03/09/2010
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12/15/2009
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