Patent Assignment Details
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For pending or abandoned applications please consult USPTO staff.
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Reel/Frame: | 057802/0587 | |
| Pages: | 3 |
| | Recorded: | 10/15/2021 | | |
Attorney Dkt #: | ET21045 |
Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
2
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Patent #:
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Issue Dt:
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05/24/2022
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Application #:
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16470849
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Filing Dt:
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06/18/2019
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Publication #:
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Pub Dt:
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08/13/2020
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Title:
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METHOD FOR GROWING SINGLE CRYSTAL SILICON CARBIDE INGOT HAVING LARGE DIAMETER
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Patent #:
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Issue Dt:
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12/19/2023
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Application #:
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17268189
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Filing Dt:
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02/12/2021
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Publication #:
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Pub Dt:
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10/14/2021
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Title:
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METHOD OF GROWING SEMI-INSULATING SILICON CARBIDE SINGLE CRYSTAL USING DOPANT COATED WITH A CARBON-BASED MATERIAL
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Assignee
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23F., CITY AIR TOWER, 36, TEHERAN-RO 87-GIL, GANGNAM-GU |
SEOUL, KOREA, REPUBLIC OF 06164 |
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Correspondence name and address
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IP & T GROUP LLP
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102 MAPLE AVE. E
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VIENNA, VA 22180
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