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Patent Assignment Details
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Reel/Frame:013709/0610   Pages: 4
Recorded: 01/27/2003
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
Issue Dt:
08/01/2006
Application #:
10351385
Filing Dt:
01/27/2003
Publication #:
Pub Dt:
08/07/2003
Title:
MANUFACTURING METHOD FOR BURIED INSULATING LAYER-TYPE SEMICONDUCTOR SILICON CARBIDE SUBSTRATE
Assignors
1
Exec Dt:
12/20/2002
2
Exec Dt:
12/20/2002
3
Exec Dt:
12/20/2002
4
Exec Dt:
12/20/2002
5
Exec Dt:
12/20/2002
6
Exec Dt:
12/20/2002
7
Exec Dt:
12/20/2002
Assignees
1
2-1-22, OTEMAE, CHUO-KU
OSAKA-SHI, OSAKA, JAPAN 540-8570
2
1-4-33, KITAKYUHOJI, YAO-SHI
OSAKA, JAPAN 581-0071
Correspondence name and address
ARMSTRONG WESTERMAN & HATTORI, LLP
STEPHEN G. ADRIAN
1725 K STREET, N.W.
SUITE 1000
WASHINGTON, DC 20006

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