Patent Assignment Details
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Reel/Frame: | 010023/0613 | |
| Pages: | 3 |
| | Recorded: | 06/15/1999 | | |
Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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04/18/2000
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Application #:
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09280689
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Filing Dt:
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03/30/1999
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Title:
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A DIODE FORMED IN A SURFACE SILICON LAYER ON AN SOI SUBSTRATE
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Assignee
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1-1, NISHI-SHINJUKU 2-CHOME |
SHINJUKU-KU, TOKYO 163-0428, JAPAN |
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Correspondence name and address
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ARMSTRONG, WESTERMAN, HATTORI, ET AL
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KEN-ICHI HATTORI
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1725 K STREET, N.W., SUITE 1000
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WASHINGTON, D.C. 20006
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