Patent Assignment Details
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Reel/Frame: | 026676/0617 | |
| Pages: | 5 |
| | Recorded: | 07/30/2011 | | |
Attorney Dkt #: | SPENCER3 |
Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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NONE
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Issue Dt:
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Application #:
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11626388
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Filing Dt:
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01/24/2007
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Publication #:
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Pub Dt:
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07/24/2008
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Title:
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Method, system, and apparatus for the growth of SiC and related or similar material, by chemical vapor deposition, using precursors in modified cold-wall reactor
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Assignee
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950 DANBY RD |
ITHACA, NEW YORK 14850 |
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Correspondence name and address
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BIJAN TADAYON
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11204 ALBERMYRTLE RD
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POTOMAC, MD 20854
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