Patent Assignment Details
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Reel/Frame: | 037517/0619 | |
| Pages: | 3 |
| | Recorded: | 01/14/2016 | | |
Attorney Dkt #: | BJ5292US (#90793) |
Conveyance: | CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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05/17/2016
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Application #:
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13994306
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Filing Dt:
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06/14/2013
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Publication #:
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Pub Dt:
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10/17/2013
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Title:
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PROCESS FOR GROWING SILICON CARBIDE SINGLE CRYSTAL BY PHYSICAL VAPOR TRANSPORT METHOD AND ANNEALING SILICON CARBIDE SINGLE CRYSTAL IN SITU
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Assignee
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ROOM 118, BUILDING A NO. 8, 3RD SOUTH STREET |
ZHONGGUANCUN, HAIDIAN DISTRICT, BEIJING, CHINA 100190 |
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Correspondence name and address
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D. PETER HOCHBERG
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1940 EAST 6TH ST. - 6TH FLOOR
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CLEVELAND, OH 44114
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