Patent Assignment Details
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| Reel/Frame: | 025091/0620 | |
| Pages: | 15 |
| | Recorded: | 09/29/2010 | | |
| Attorney Dkt #: | 25815.747 |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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11/09/2010
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Application #:
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12545575
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Filing Dt:
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08/21/2009
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Publication #:
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Pub Dt:
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01/14/2010
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Title:
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METHOD FOR GROWTH OF GAN SINGLE CRYSTAL, METHOD FOR PREPARATION OF GAN SUBSTRATE, PROCESS FOR PRODUCING GAN-BASED ELEMENT, AND GAN-BASED ELEMENT
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Assignees
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| 2-3, MARUNOUCHI 2- CHOME, CHIYODA-KU |
| TOKYO, 100-8370, JAPAN |
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| 14-1, SHIBA 4-CHOME, MINATO-KU |
| TOKYO, 108-0014, JAPAN |
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| 14-1, SOTOKANDA 4- CHOME, CHIYODA-KU |
| TOKYO, 101-0021, JAPAN |
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| 321 GONGDAN-DONG, GUMI-CITY |
| GYUNGSANGBUK-DO, 730-030, KOREA, REPUBLIC OF |
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| 633-2 GOAN-RI, BAEKAM-MYEON, CHEOLN-GU |
| YONGIN-CITY, GYEONGGI-DO, 449-863, KOREA, REPUBLIC OF |
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Correspondence name and address
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JOHN J. TORRENTE
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COWAN, LIEBOWITZ & LATMAN, P.C.
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1133 AVENUE OF THE AMERICAS
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NEW YORK, NY 10036-6799
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