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Reel/Frame:058055/0637   Pages: 4
Recorded: 11/09/2021
Attorney Dkt #:2806-2 CON (0005)
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
Issue Dt:
04/23/2024
Application #:
17130943
Filing Dt:
12/22/2020
Publication #:
Pub Dt:
09/09/2021
Title:
METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR HAVING ENHANCED HIGH-FREQUENCY PERFORMANCE
Assignor
1
Exec Dt:
11/06/2021
Assignee
1
BUILDING C, NO. 888, HUANHU WEST 2ND ROAD, LINGANG NEW AREA,
CHINA (SHANGHAI) PILOT FTZ
SHANGHAI, CHINA 200120
Correspondence name and address
HOFFMANN & BARON LLP
6900 JERICHO TURNPIKE
SYOSSET, NY 11791

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