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Reel/Frame:062019/0652   Pages: 44
Recorded: 11/30/2022
Attorney Dkt #:6822-0118M
Conveyance: MERGER (SEE DOCUMENT FOR DETAILS).
Total properties: 8
1
Patent #:
Issue Dt:
07/30/2019
Application #:
15361226
Filing Dt:
11/25/2016
Publication #:
Pub Dt:
05/25/2017
Title:
SUBSTRATE FOR CRYSTAL GROWTH HAVING A PLURALITY OF GROUP III NITRIDE SEED CRYSTALS ARRANGED IN A DISC SHAPE
2
Patent #:
Issue Dt:
04/16/2019
Application #:
15398319
Filing Dt:
01/04/2017
Publication #:
Pub Dt:
07/06/2017
Title:
METHOD FOR MANUFACTURING NITRIDE CRYSTAL SUBSTRATE AND SUBSTRATE FOR CRYSTAL GROWTH
3
Patent #:
Issue Dt:
06/16/2020
Application #:
15718962
Filing Dt:
09/28/2017
Publication #:
Pub Dt:
03/29/2018
Title:
METHOD FOR MANUFACTURING NITRIDE CRYSTAL SUBSTRATE AND NITRIDE CRYSTAL LAMINATE
4
Patent #:
Issue Dt:
11/19/2019
Application #:
15754784
Filing Dt:
02/23/2018
Publication #:
Pub Dt:
09/13/2018
Title:
SEMICONDUCTOR DEVICE
5
Patent #:
Issue Dt:
06/16/2020
Application #:
15754951
Filing Dt:
02/23/2018
Publication #:
Pub Dt:
06/13/2019
Title:
SEMICONDUCTOR DEVICE
6
Patent #:
Issue Dt:
05/14/2019
Application #:
15789659
Filing Dt:
10/20/2017
Publication #:
Pub Dt:
04/26/2018
Title:
METHOD FOR MANUFACTURING GROUP-III NITRIDE SUBSTRATE AND GROUP-III NITRIDE SUBSTRATE
7
Patent #:
Issue Dt:
02/07/2023
Application #:
15832255
Filing Dt:
12/05/2017
Publication #:
Pub Dt:
06/07/2018
Title:
NITRIDE SEMICONDUCTOR TEMPLATE AND NITRIDE SEMICONDUCTOR DEVICE
8
Patent #:
Issue Dt:
07/27/2021
Application #:
15832442
Filing Dt:
12/05/2017
Publication #:
Pub Dt:
06/07/2018
Title:
NITRIDE SEMICONDUCTOR TEMPLATE AND NITRIDE SEMICONDUCTOR DEVICE
Assignor
1
Exec Dt:
10/01/2022
Assignee
1
2-7-1, NIHONBASHI, CHUO-KU
TOKYO, JAPAN
Correspondence name and address
BIRCH, STEWART, KOLASCH & BIRCH, LLP
8110 GATEHOUSE ROAD, SUITE 100 EAST
FALLS CHURCH, VA 22042-1248

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