Patent Assignment Details
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| Reel/Frame: | 018081/0683 | |
| Pages: | 3 |
| | Recorded: | 07/20/2006 | | |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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NONE
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Issue Dt:
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Application #:
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11489872
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Filing Dt:
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07/20/2006
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Publication #:
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Pub Dt:
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02/08/2007
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Title:
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Method for manufacturing p-type gallium nitride compound semiconductor, method for activating p-type impurity contained in gallium nitride compound semiconductor, and apparatus for activating p-type impurity contained in gallium nitride compound semiconductor
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Assignee
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| 6 TAKEDA TOBADONO-CHO, FUSHIMI-KU |
| KYOTO, JAPAN 612-8501 |
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Correspondence name and address
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MASAYASU MORI
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DITHAVONG & MORI, P.C.
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10507 BRADDOCK ROAD
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SUITE A
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FAIRFAX, VA 22032
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