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Reel/Frame:053161/0709   Pages: 4
Recorded: 07/09/2020
Attorney Dkt #:252011-7570
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
Issue Dt:
08/31/2021
Application #:
16561362
Filing Dt:
09/05/2019
Publication #:
Pub Dt:
03/19/2020
Title:
FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
Assignors
1
Exec Dt:
05/18/2020
2
Exec Dt:
05/18/2020
3
Exec Dt:
02/13/2020
Assignee
1
NO. 8, LI-HSIN RD. 6, HSINCHU SCIENCE PARK
HSINCHU, TAIWAN 300-78
Correspondence name and address
MCCLURE, QUALEY & RODACK, LLP
280 INTERSTATE NORTH CIRCLE SE
SUITE 550
ATLANTA, GA 30339

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