Patent Assignment Details
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| Reel/Frame: | 021145/0731 | |
| Pages: | 4 |
| | Recorded: | 06/25/2008 | | |
| Attorney Dkt #: | 603-0076 |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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03/30/2010
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Application #:
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12145530
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Filing Dt:
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06/25/2008
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Publication #:
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Pub Dt:
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01/08/2009
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Title:
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METHOD OF FABRICATING SEMICONDUCTOR HIGH-VOLTAGE DEVICE COMPRISING THE STEPS OF USING PHOTOLITHOGRPAHIC PROCESSES TO FORM NITRIDE SPACER REGIONS AND DRY ETCH PROCESS TO FORM DEEP TRENCH REGIONS
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Assignee
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| 891-10 DAECHI-DONG, GANGNAM-GU |
| SEOUL, KOREA, REPUBLIC OF 135-280 |
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Correspondence name and address
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DANIEL H. SHERR
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620 HERNDON PARKWAY
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SUITE 200
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HERNDON, VA 20170
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