Patent Assignment Details
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| Reel/Frame: | 008181/0760 | |
| Pages: | 3 |
| | Recorded: | 09/11/1996 | | |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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09/22/1998
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Application #:
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08712148
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Filing Dt:
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09/11/1996
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Title:
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METHOD OF FABRICATING DEEP SUBMICRON MOSFET WITH NARROW GATE LENGTH USING THERMAL OXIDATION OF POLYSILICON
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Assignee
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| 123, PARK AVE-3RD, SCIENCE-BASED INDUSTRIAL PARK |
| HSINCHU, TAIWAN |
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Correspondence name and address
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CHRISTENSEN O`CONNOR JOHNSON ET AL
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CHUN M. NG, ESQ.
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1420 FIFTH AVENUE
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SUITE 2800
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SEATTLE, WA 98101-2347
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