Patent Assignment Details
NOTE:Results display only for issued patents and published applications.
For pending or abandoned applications please consult USPTO staff.
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| Reel/Frame: | 025167/0829 | |
| Pages: | 3 |
| | Recorded: | 10/20/2010 | | |
| Attorney Dkt #: | 100-35300 (P07498) |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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08/06/2013
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Application #:
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12908458
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Filing Dt:
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10/20/2010
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Publication #:
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Pub Dt:
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04/26/2012
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Title:
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A GROUP III-NITRIDE HEMT HAVING A WELL REGION FORMED ON THE SURFACE OF SUBSTRATE AND CONTACTED THE BUFFER LAYER TO INCREASE BREAKDOWN VOLTAGE AND THE METHOD FOR FORMING THE SAME.
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Assignee
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| 2900 SEMICONDUCTOR DRIVE |
| M/S D3-579 |
| SANTA CLARA, CALIFORNIA 95051-8090 |
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Correspondence name and address
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LAW OFFICE OF MARK C. PICKERING
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P.O. BOX 151440
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SAN RAFAEL, CA 94915-1440
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