Patent Assignment Details
NOTE:Results display only for issued patents and published applications.
For pending or abandoned applications please consult USPTO staff.
|
Reel/Frame: | 025088/0835 | |
| Pages: | 5 |
| | Recorded: | 10/04/2010 | | |
Attorney Dkt #: | 31001_JBG_MSK_DD |
Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
|
Total properties:
8
|
|
Patent #:
|
NONE
|
Issue Dt:
|
|
Application #:
|
12101143
|
Filing Dt:
|
04/10/2008
|
Publication #:
|
|
Pub Dt:
|
10/16/2008
| | | | |
Title:
|
PILLAR-TYPE FIELD EFFECT TRANSISTOR HAVING LOW LEAKAGE CURRENT
|
|
|
Patent #:
|
|
Issue Dt:
|
03/27/2012
|
Application #:
|
12200929
|
Filing Dt:
|
08/28/2008
|
Publication #:
|
|
Pub Dt:
|
04/29/2010
| | | | |
Title:
|
HIGH PERFORMANCE ONE-TRANSISTOR DRAM CELL DEVICE AND MANUFACTURING METHOD THEREOF
|
|
|
Patent #:
|
|
Issue Dt:
|
03/27/2012
|
Application #:
|
12292427
|
Filing Dt:
|
11/19/2008
|
Publication #:
|
|
Pub Dt:
|
06/11/2009
| | | | |
Title:
|
ONE-TRANSISTOR FLOATING-BODY DRAM CELL DEVICE WITH NON-VOLATILE FUNCTION
|
|
|
Patent #:
|
|
Issue Dt:
|
03/15/2011
|
Application #:
|
12310532
|
Filing Dt:
|
02/27/2009
|
Publication #:
|
|
Pub Dt:
|
10/28/2010
| | | | |
Title:
|
FIN FIELD EFFECT TRANSISTOR HAVING LOW LEAKAGE CURRENT AND METHOD OF MANUFACTURING THE FINFET
|
|
|
Patent #:
|
|
Issue Dt:
|
10/11/2011
|
Application #:
|
12312717
|
Filing Dt:
|
05/22/2009
|
Publication #:
|
|
Pub Dt:
|
03/04/2010
| | | | |
Title:
|
HIGH DENSITY FLASH MEMORY DEVICE AND FABRICATING METHOD THEREOF
|
|
|
Patent #:
|
|
Issue Dt:
|
06/25/2013
|
Application #:
|
12312985
|
Filing Dt:
|
06/03/2009
|
Publication #:
|
|
Pub Dt:
|
02/18/2010
| | | | |
Title:
|
HIGH DENSITY FLASH MEMORY DEVICE , CELL STRING AND FABRICATING METHOD THEREOF
|
|
|
Patent #:
|
|
Issue Dt:
|
06/14/2011
|
Application #:
|
12314163
|
Filing Dt:
|
12/05/2008
|
Publication #:
|
|
Pub Dt:
|
07/23/2009
| | | | |
Title:
|
FLASH MEMORY CELL STRING
|
|
|
Patent #:
|
NONE
|
Issue Dt:
|
|
Application #:
|
12320620
|
Filing Dt:
|
01/30/2009
|
Publication #:
|
|
Pub Dt:
|
09/17/2009
| | | | |
Title:
|
Cell device and cell string for high density NAND flash memory
|
|
Assignee
|
|
|
SAN 56-1, SILLIM-DONG, GWANAK-GU |
SEOUL, KOREA, REPUBLIC OF 151-015 |
|
Correspondence name and address
|
|
THE NATH LAW GROUP
|
|
112 S. WEST STREET
|
|
31001_JBG/JLM/MSK/DD
|
|
ALEXANDRIA, VA 22314
|
Search Results as of:
09/21/2024 07:44 PM
If you have any comments or questions concerning the data displayed,
contact
PRD / Assignments at 571-272-3350. v.2.6
Web interface last modified:
August 25, 2017 v.2.6
|