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Patent Assignment Details
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Reel/Frame:008191/0879   Pages: 2
Recorded: 09/26/1996
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
Issue Dt:
07/11/2000
Application #:
08721320
Filing Dt:
09/26/1996
Title:
HIGH THERMAL CONDUCTIVITY SILICON NITRIDE CIRCUIT SUBSTRATE AND SEMICONDUCTOR DEVICE USING THE SAME
Assignors
1
Exec Dt:
09/03/1996
2
Exec Dt:
09/03/1996
3
Exec Dt:
09/03/1996
4
Exec Dt:
09/03/1996
Assignee
1
72, HORIKAWA-CHO, SAIWAI-KU, KANAGAWA-KEN
KAWASAKI-SHI, JAPAN
Correspondence name and address
FOLEY & LARDNER
RICHARD L. SCHWAAB
3000 K STREET, N.W., SUITE 500
WASHINGTON, D.C. 20007-5109

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