Patent Assignment Details
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| Reel/Frame: | 014120/0891 | |
| Pages: | 2 |
| | Recorded: | 02/12/2003 | | |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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06/07/2005
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Application #:
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10344423
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Filing Dt:
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02/12/2003
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Publication #:
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Pub Dt:
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09/18/2003
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Title:
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SILICON SINGLE CRYSTAL WAFER HAVING VOID DENUDED ZONE ON THE SURFACE AND DIAMETER OF ABOVE 300MM AND ITS PRODUCTION METHOD
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Assignee
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| 4-2, MARUNOUCHI 1-CHOME |
| CHIYODA-KU |
| TOKYO, JAPAN |
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Correspondence name and address
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HOGAN & HARTSON L.L.P.
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ANTHONY J. ORLER, ESQ.
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500 SOUTH GRAND AVENUE
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SUITE 1900
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LOS ANGELES, CA 90071
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