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Reel/Frame:021245/0900   Pages: 3
Recorded: 07/16/2008
Attorney Dkt #:MMOS-0506
Conveyance: CORRECTIVE ASSIGNMENT TO CORRECT THE ASSIGNEE PREVIOUSLY RECORDED ON REEL 017055 FRAME 0399. ASSIGNOR(S) HEREBY CONFIRMS THE TO CORRECT THE ASSIGNEE FROM "M-MOS SDN. BHD." TO "M-MOS SEMICONDUCTOR SDN. BHD.".
Total properties: 1
1
Patent #:
NONE
Issue Dt:
Application #:
11236007
Filing Dt:
09/26/2005
Publication #:
Pub Dt:
12/07/2006
Title:
Structure for avalanche improvement of ultra high density trench MOSFET
Assignor
1
Exec Dt:
09/21/2005
Assignee
1
1 SILICON DRIVE, SAMA JAYA FREE INDUSTRIAL ZONE
93350 KUCHING, SARAWAK, MALAYSIA
Correspondence name and address
BO-IN LIN
13445 MANDOLI DRIVE
LOS ALTOS HILLS, CA 94022

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