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Reel/Frame:033838/0906   Pages: 2
Recorded: 09/29/2014
Attorney Dkt #:81546142US03
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
Issue Dt:
10/04/2016
Application #:
14499654
Filing Dt:
09/29/2014
Publication #:
Pub Dt:
04/02/2015
Title:
Diode Having a Reduced Surface Field Effect Trench Structure and Method of Manufacturing a Diode Having a Reduced Surface Field Effect Trench Structure.
Assignors
1
Exec Dt:
05/07/2014
2
Exec Dt:
05/07/2014
Assignee
1
HIGH TECH CAMPUS 60
EINDHOVEN, NETHERLANDS 5656 AG
Correspondence name and address
INTELLECTUAL PROPERTY AND LICENSING NXP
411 EAST PLUMERIA DRIVE, MS41
SAN JOSE, CA 95134

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