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Reel/Frame:044766/0917   Pages: 10
Recorded: 01/30/2018
Attorney Dkt #:3645.03-14007(SOI85 US00
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
Issue Dt:
12/17/2019
Application #:
15803447
Filing Dt:
11/03/2017
Publication #:
Pub Dt:
05/10/2018
Title:
METHOD OF FABRICATION OF A SEMICONDUCTOR ELEMENT COMPRISING A HIGHLY RESISTIVE SUBSTRATE
Assignors
1
Exec Dt:
12/11/2012
2
Exec Dt:
12/07/2017
3
Exec Dt:
12/06/2017
4
Exec Dt:
12/07/2017
Assignee
1
CHEMIN DES FRANQUES
PARC TECHNOLOGIQUE DES FONTAINES
BERNIN, FRANCE 38190
Correspondence name and address
TRASKBRITT, P.C.
P.O. BOX 2550
SALT LAKE CITY, UT 84110

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