Patent Assignment Details
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| Reel/Frame: | 010030/0918 | |
| Pages: | 3 |
| | Recorded: | 06/04/1999 | | |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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08/29/2000
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Application #:
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09327093
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Filing Dt:
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06/04/1999
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Title:
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METHOD FOR MAKING A MOSFET WITH SELF-ALIGNED SOURCE AND DRAIN CONTACTS INCLUDING FORMING AN OXIDE LINER ON THE GATE, FORMING NITRIDE SPACERS ON THE LINER, ETCHING THE LINER, AND FORMING CONTACTS IN THE GAPS
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Assignee
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| SCIENCE-BASED IDUSTRIAL PARK |
| NO. 25, LI-HSIN ROAD |
| HSINCHU, TAIWAN |
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Correspondence name and address
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BLAKELY, SOKOLOFF, TAYLOR ET AL.
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ALOYSIUS T.C. AUYEUNG
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12400 WILSHIRE BLVD.
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SEVENTH FLOOR
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LOS ANGELES, CA 90025
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