Patent Assignment Details
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For pending or abandoned applications please consult USPTO staff.
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| Reel/Frame: | 066659/0921 | |
| Pages: | 5 |
| | Recorded: | 03/06/2024 | | |
| Attorney Dkt #: | GBNJLF009-PKG |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
2
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Patent #:
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Issue Dt:
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06/14/2022
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Application #:
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16960322
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Filing Dt:
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07/07/2020
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Publication #:
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Pub Dt:
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01/07/2021
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Title:
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GROUP III NITRIDE ENHANCEMENT-MODE HEMT BASED ON COMPOSITE BARRIER LAYER STRUCTURE AND MANUFACTURING METHOD THEREOF
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Patent #:
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Issue Dt:
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01/30/2024
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Application #:
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17040548
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Filing Dt:
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09/23/2020
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Publication #:
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Pub Dt:
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12/09/2021
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Title:
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SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF EMPLOYING AN ETCHING TRANSITION LAYER
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Assignee
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| BUILDING 7,SEMICONDUCTOR SCIENCE AND TECHNOLOGY PARK,GAOXIN 5 ROAD,FUZHOU HIGH-TECH INDUSTRIAL DEVELOPMENT ZONE, JIANGXI PROVINCE |
| FUZHOU, CHINA |
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Correspondence name and address
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GOKALP BAYRAMOGLU
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1540 WEST WARM SPRINGS RD., SUITE 100
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HENDERSON, NV 89014
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