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Reel/Frame:012707/0971   Pages: 4
Recorded: 03/14/2002
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
Issue Dt:
05/22/2001
Application #:
09425904
Filing Dt:
10/25/1999
Title:
METHOD TO FORM GATE OXIDES OF DIFFERENT THICKNESSES ON A SILICON SUBSTRATE
Assignor
1
Exec Dt:
02/06/2002
Assignees
1
60 WOODLANDS INDUSTRIAL PARK D. STREET 2
SINGAPORE, SINGAPORE 73840
2
SCIENCE PARK ROAD
SINGAPORE SCIENCE PARK II
SINGAPORE 117685, SINGAPORE
Correspondence name and address
GEORGE O. SAILE
20 MCINTOSH DRIVE
POUGHKEEPSIE, NY 12503

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