Patent Assignment Details
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Reel/Frame: | 009051/0988 | |
| Pages: | 2 |
| | Recorded: | 03/12/1998 | | |
Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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11/07/2000
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Application #:
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09041863
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Filing Dt:
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03/12/1998
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Title:
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METHOD FOR MAKING A DRAM CAPACITOR USING A DOUBLE LAYER OF INSITU DOPED POLYSILICON AND UNDOPED AMORPHOUS POLYSILICON WITH HSG POLYSILICON
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Assignee
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NO. 9, LI-HSIN ROAD, SCIENCE-BASED INDUSTRIAL PARK |
HSINCHU, TAIWAN R.O.C |
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Correspondence name and address
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CHRISTENSEN O'CONNOR JOHNSON & KINDNESS
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CHUN M. NG, ESQ.
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1420 FIFTH AVENUE, SUITE 2800
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SEATTLE, WA 98101-2347
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