Patent Assignment Abstract of Title
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Total Assignments:
1
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Patent #:
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Issue Dt:
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08/18/2020
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Application #:
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16525348
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Filing Dt:
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07/29/2019
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Publication #:
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Pub Dt:
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11/14/2019
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Inventors:
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Che-Cheng Chang, Jr-Jung Lin, Shih-Hao Chen, Chih-Han Lin, Mu-Tsang Lin, Yung-Jung Chang
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Title:
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Method and Structure for FinFET Comprising Patterned Oxide and Dielectric Layer Under Spacer Features
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Assignment:
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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8, LI-HSIN RD. 6 |
HSINCHU SCIENCE PARK |
HSINCHU, TAIWAN 300-78 |
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HAYNES AND BOONE, LLP (24061) IP SECTION |
2323 VICTORY AVENUE |
SUITE 700 |
DALLAS, TX 75219 |
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