Patent Assignment Abstract of Title
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Total Assignments:
1
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Patent #:
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Issue Dt:
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09/01/2020
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Application #:
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15949273
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Filing Dt:
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04/10/2018
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Publication #:
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Pub Dt:
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10/10/2019
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Inventors:
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Jyun-Hao LIN, Chun-Feng NIEH, Huicheng CHANG, Yu-Chang LIN
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Title:
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Gradient Doped Region of Recessed Fin Forming a FinFET Device
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Assignment:
1
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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| 8, LI-HSIN RD. 6, HSINCHU SCIENCE PARK |
| HSINCHU, TAIWAN |
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| PATTERSON & SHERIDAN, LLP |
| 24 GREENWAY PLAZA |
| SUITE 1600 |
| HOUSTON, TX 77046 |
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