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Patent Assignment Abstract of Title

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Total Assignments: 2

Patent #:	11393674	Issue Dt:	07/19/2022	Application #:	15983565	Filing Dt:	05/18/2018
Publication #:	20190355570	Pub Dt:	11/21/2019
Inventors:	Ching Yu Huang, Chunyao Wang, Wei-Che Hsieh, Hsin-Hao Yeh, Tze-Liang Lee
Title:	Forming Low-Stress Silicon Nitride Layer Through Hydrogen Treatment

Assignment: 1

Reel/Frame:

045883/0463

Recorded: 05/23/2018

Pages: 4

Conveyance:

ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).

Assignors:

HSIEH, WEI-CHE

Exec Dt:

05/14/2018

YU, HUANG CHING

Exec Dt:

05/14/2018

YEH, HSIN-HAO

Exec Dt:

05/14/2018

WANG, CHUNYAO

Exec Dt:

05/14/2018

LEE, TZE-LIANG

Exec Dt:

05/15/2018

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

8, LI-HSIN RD. 6, HSINCHU SCIENCE PARK

HSINCHU, TAIWAN 300-78

Correspondent:

SLATER MATSIL, LLP

17950 PRESTON RD., SUITE 1000

DALLAS, TX 75252

Assignment: 2

Reel/Frame:

046347/0675

Recorded: 06/12/2018

Pages: 6

Conveyance:

CORRECTIVE ASSIGNMENT TO CORRECT THE SPELLING OF THE SECOND INVENTOR'S NAME AND ALL ASSIGNOR'S EXECUTION DATES PREVIOUSLY RECORDED ON REEL 045883 FRAME 0463. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT OF ASSIGNOR'S INTEREST.

Assignors:

HSIEH, WEI-CHE

Exec Dt:

06/01/2018