Patent Assignment Abstract of Title
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Total Assignments:
1
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Patent #:
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Issue Dt:
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09/10/2024
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Application #:
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18580161
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Filing Dt:
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01/18/2024
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Publication #:
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Pub Dt:
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08/08/2024
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Inventors:
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Hang GU, Wei GAO, Maozhou DAI
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Title:
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Trench SiC MOSFET Integrated with High-speed Flyback Diode and Preparation Method Thereof
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Assignment:
1
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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| NO. 12-18, 9TH FLOOR, BUILDING 2, NO. 1366, MIDDLE SECTION OF TIANFU AVENUE, CHENGDU HIGH-TECH ZONE, SICHUAN |
| CHENGDU, CHINA |
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| GOKALP BAYRAMOGLU |
| 1540 WEST WARM SPRINGS RD., SUITE 100 HENDERSON |
| SUITE 100 |
| HENDERSON, NV 89014 |
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09/23/2024 02:38 AM
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