Patent Assignment Abstract of Title
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Total Assignments:
1
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Patent #:
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Issue Dt:
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10/11/1994
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Application #:
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08090934
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Filing Dt:
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07/14/1993
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Inventor:
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OSAMU TAKATA
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Title:
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INSULATED GATE FIELD EFFECT TRANSISTOR HAVING LDD STRUCTURE AND METHOD OF MAKING THE SAME INCLUDING A CHANNEL STOP HAVING A PEAK IMPURITY CONCENTRATION, THE CHANNEL STOP PROVIDED BELOW A CHANNEL REGION
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Assignment:
1
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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72 HORIKAWA-CHO |
SAIWAI-KU, |
KAWASAKI-SHI,, JAPAN |
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MR. JOHN B. TURNER |
MANAGER, FILING AND PROSECUTION DEPT. |
FINNEGAN, HENDERSON, FARABOW ET AL |
1300 I STREET, N.W. |
WASHINGTON, D.C. 20005 |
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