Patent Assignment Abstract of Title
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Total Assignments:
2
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Patent #:
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Issue Dt:
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10/29/1996
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Application #:
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08496064
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Filing Dt:
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06/28/1995
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Inventors:
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SHOICHI IWASA, TAKESHI NAGANUMA
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Title:
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AN INSULATED-GATE FIELD-EFFECT TRANSISTOR INA SEMICONDUCTOR DEVICE IN WHICH SOURCE/DRAIN ELECTRODES ARE DEFINED BY FORMATION OF SILICIDE ON A GATE ELECTRODE AND A FIELD-EFFECT TRANSISTOR
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Assignment:
1
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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| 6-3, OHTEMACHI-2-CHOME, CHIYODA-KU |
| TOKYO, JAPAN |
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| ELZBIETA CHLOPECKA |
| POLLOCK, VANDE SANDE & PRIDDY |
| P.O. BOX 19088 |
| SUITE 800, 1990 M STREET, N.W. |
| WASHINGTON, D.C. 20036 |
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Assignment:
2
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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| NO. 3 LI HSIN ROAD 2 SCIENCE BASED INDUSTRIAL PARK |
| HSIN CHU CITY, TAIWAN |
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| CONNOLLY BOVE LODGE & HUTZ |
| LARRY J. HUME |
| SUITE 800 |
| 1990 M. STREET, N.W., |
| WASHINGTON, D.C. 20036-3425 |
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