Patent Assignment Abstract of Title
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Total Assignments:
1
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Patent #:
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Issue Dt:
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12/30/1997
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Application #:
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08684804
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Filing Dt:
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07/22/1996
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Inventor:
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HORNG-HUEI TSENG
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Title:
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METHOD OF FABRICATING A DEEP SUBMICRON MOSFET DEVICE USING A RECESSED, NARROW POLYSILICON GATE STRUCTURE
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Assignment:
1
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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SCIENCE BASED INDUSTRIAL PARK |
123 PARK AVE. III |
HSIN-CHU, R.O.C., TAIWAN |
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GEORGE O. SAILE |
20 MCINTOSH DR. |
POUGHKEEPSIE, NY 12603 |
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