Patent Assignment Abstract of Title
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Total Assignments:
1
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Patent #:
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Issue Dt:
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01/09/2007
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Application #:
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11174750
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Filing Dt:
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07/05/2005
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Publication #:
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Pub Dt:
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05/04/2006
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Inventors:
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Shian-Jyh Lin, Sheng-Tsung Chen, Yi-Jung Chen, Neng-Tai Shih, Chien-Chang Huang et al
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Title:
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METHOD OF FABRICATING MOS TRANSISTOR BY MILLISECOND ANNEAL
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Assignment:
1
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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FUHSING 3 RD., KUEISHAN |
HWA-YA TECHNOLOGY PARK 669 |
TAOYUAN, TAIWAN |
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QUINTERO LAW OFFICE |
1617 BROADWAY, 3RD FLOOR |
SANTA MONICA, CA 90404 |
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