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Patent Assignment Abstract of Title
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Total Assignments: 1
Patent #:
Issue Dt:
09/01/2009
Application #:
11158978
Filing Dt:
06/22/2005
Publication #:
Pub Dt:
01/12/2006
Inventors:
Seung-Hwan Lee, Dong-Suk Shin, Hwa-Sung Rhee, Tetsuji Ueno, Ho Lee
Title:
METHOD OF FORMING MOS TRANSISTOR HAVING FULLY SILICIDED METAL GATE ELECTRODE
Assignment: 1
Reel/Frame:
016720/0808Recorded: 06/22/2005Pages: 3
Conveyance:
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Assignors:
Exec Dt:
05/25/2005
Exec Dt:
05/26/2005
Exec Dt:
05/31/2005
Exec Dt:
05/31/2005
Exec Dt:
05/31/2005
Assignee:
416, MAETAN-DONG
YEONGTONG-GU
SUWON-SI, GYEONGGI-DO, KOREA, REPUBLIC OF
Correspondent:
STEVEN M. MILLS
MILLS & ONELLO LLP
ELEVEN BEACON STREET, 605
BOSTON, MASSACHUSETTS 02108

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