Patent Assignment Abstract of Title
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Total Assignments:
2
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Patent #:
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Issue Dt:
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02/14/2012
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Application #:
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11127718
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Filing Dt:
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05/12/2005
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Publication #:
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Pub Dt:
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11/16/2006
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Inventors:
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Fwu-Iuan Hshieh, Yee Ai Fai, Ng Yeow Keong
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Title:
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ELIMINATION OF GATE OXIDE WEAK SPOT IN DEEP TRENCH
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Assignment:
1
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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| 1 SILICON DRIVE |
| SAMA JAYA FREE INDUSTRIAL ZONE |
| 93350 KUCHING, SARAWAK, MALAYSIA |
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| BO-IN LIN |
| 13445 MANDOLI DRIVE |
| LOS ALTOS HILLS, CA 94022 |
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Assignment:
2
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CORRECTIVE ASSIGNMENT TO CORRECT THE TO CORRECT THE ASSIGNEE PREVIOUSLY RECORDED ON REEL 016565 FRAME 0272. ASSIGNOR(S) HEREBY CONFIRMS THE FROM "M-MOS SDN. BHD." TO "M-MOS SEMICONDUCTOR SDN. BHD.".
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| 1 SILICON DRIVE, SAMA JAYA FREE INDUSTRIAL ZONE |
| 93350 KUCHING, SARAWAK, MALAYSIA |
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| BO-IN LIN |
| 13445 MANDOLI DRIVE |
| LOS ALTOS HILLS, CA 94022 |
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