Patent Assignment Abstract of Title
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Total Assignments:
2
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Patent #:
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Issue Dt:
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01/08/2013
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Application #:
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12527116
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Filing Dt:
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08/13/2009
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Publication #:
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Pub Dt:
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05/13/2010
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Inventors:
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Naohiro Nishikawa, Hiroyuki Sazawa, Masahiko Hata
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Title:
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GALLIUM NITRIDE EPITAXIAL CRYSTAL, METHOD FOR PRODUCTION THEREOF, AND FIELD EFFECT TRANSISTOR
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Assignment:
1
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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| 27-1, SHINKAWA 2-CHOME, CHUO-KU |
| TOKYO, JAPAN 104-8260 |
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| FITCH, EVEN, TABIN & FLANNERY |
| P. O. BOX 18415 |
| WASHINGTON, DC 20036 |
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Assignment:
2
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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| 500 ORACLE PARKWAY |
| MAIL STOP 50P7 |
| REDWOOD SHORES, CALIFORNIA 94065 |
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| BRIAN N. YOUNG |
| 1900 EMBARCADERO ROAD |
| SUITE 109 |
| PALO ALTO, CA 94303 |
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