Patent Assignment Abstract of Title
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Total Assignments:
2
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Patent #:
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Issue Dt:
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01/29/2013
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Application #:
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12334203
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Filing Dt:
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12/12/2008
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Publication #:
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Pub Dt:
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02/18/2010
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Inventors:
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Hengyuan Lee, Pang-Hsu Chen, Ching-Chiun Wang, Tai-Yuan Wu
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Title:
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RESISTIVE RANDOM ACCESS MEMORY HAVING METAL OXIDE LAYER WITH OXYGEN VACANCIES AND METHOD FOR FABRICATING THE SAME
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Assignment:
1
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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| NO. 195, SEC. 4, CHUNG HSING ROAD, CHUTUNG |
| HSINCHU, TAIWAN 31040 |
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| QUINTERO LAW OFFICE |
| 2210 MAIN STREET, SUITE 200 |
| SANTA MONICA, CA 90405 |
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Assignment:
2
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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| NO.8, LI-HSIN ROAD. 6, SCIENCE-BASED INDUSTRIAL PARK |
| HSIN-CHU, TAIWAN 300-77 |
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| MCCLURE, QUALEY & RODACK, LLP |
| 3100 INTERSTATE NORTH CIRCLE |
| SUITE 150 |
| ATLANTA, GA 30339 |
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