Patent Assignment Abstract of Title
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Total Assignments:
1
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Patent #:
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NONE
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Issue Dt:
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Application #:
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09734837
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Filing Dt:
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12/11/2000
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Publication #:
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Pub Dt:
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06/13/2002
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Inventor:
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Horng-Huei Tseng
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Title:
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Method of forming tungsten nitride layer as metal diffusion barrier in gate structure of MOSFET device
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Assignment:
1
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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| SCIENCE-BASED INDUSTRIAL PARK |
| NO. 123, PARK AVE., RD. III |
| HSINCHU, TAIWAN R.O.C |
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| THOMAS, KAYDEN, HORSTEMEYER ET AL |
| DANIEL R. MCCLURE |
| 100 GALLERIA PARKWAY, SUITE 1750 |
| ATLANTA, GA 30339-5948 |
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