Patent Assignment Abstract of Title
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Total Assignments:
2
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Patent #:
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Issue Dt:
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01/13/2004
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Application #:
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10064109
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Filing Dt:
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06/12/2002
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Publication #:
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Pub Dt:
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12/05/2002
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Inventors:
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Ching-Hsiang Hsu, Ching-Sung Yang
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Title:
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STRUCTURE OF A LOW-VOLTAGE CHANNEL WRITE/ERASE FLASH MEMORY CELL AND FABRICATING METHOD THEREOF
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Assignment:
1
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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| 8F-3, NO.81, SHUEILI RD. |
| HSIN-CHU, TAIWAN |
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| NORTH AMERICA INTERNATIONAL PATENT OFFIC |
| P.O. BOX 506 |
| MERRIFIELD, VA 22116 |
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Assignment:
2
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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| NO. 12, LI-HSIN RD. I, SCIENCE-BASED INDUSTRIAL PARK |
| HSIN-CHU CITY, TAIWAN |
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| (NAIPC) NORTH AMERICA INTERNATIONAL PATE |
| P.O. BOX 506 |
| MERRIFIELD, VA 22116 |
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