Patent Assignment Abstract of Title
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Total Assignments:
1
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Patent #:
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NONE
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Issue Dt:
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Application #:
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10191435
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Filing Dt:
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07/10/2002
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Publication #:
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Pub Dt:
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12/12/2002
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Inventors:
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Hirokazu Oikawa, Hitoshi Negishi
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Title:
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Compound semiconductor device with delta doped layer under etching stopper layer for decreasing resistance between active layer and ohmic electrode and process of fabrication thereof
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Assignment:
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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1753 SHIMONUMABE, NAKAHARA-KU |
KAWASAKI, KANAGAWA, JAPAN 211-8668 |
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MCGINN & GIBB, PLLC |
SEAN M. MCGINN |
8321 OLD COURTHOUSE ROAD |
SUITE 200 |
VIENNA, VA 22182-3817 |
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05/30/2024 04:36 PM
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