Patent Assignment Abstract of Title
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Total Assignments:
1
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Patent #:
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Issue Dt:
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08/09/2005
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Application #:
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10708593
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Filing Dt:
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03/12/2004
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Publication #:
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Pub Dt:
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09/30/2004
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Inventors:
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Katsutoshi IZUMI, Motoi NAKAO, Yoshiaki OHBAYASHI, Keiji MINE, Seisaku HIRAI et al
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Title:
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METHOD FOR MANUFACTURING BURIED INSULATING LAYER TYPE SINGLE CRYSTAL SILICON CARBIDE SUBSTRATE
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Assignment:
1
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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| 2-1-22, OTEMAE, CHUO-KU, OSAKA-SHI, |
| OSAKA, JAPAN 540-8570 |
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| 4-33, KITAKYUHOJI 1-CHOME, YAO-SHI, |
| OSAKA, JAPAN 581-0071 |
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| ARMSTRONG, KRATZ, QUINTOS, HANSON & BROO |
| 1725 K STREET, NW |
| SUITE 1000 |
| WASHINGTON, DC 20006 |
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