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Patent Assignment Abstract of Title
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Total Assignments: 1
Patent #:
NONE
Issue Dt:
Application #:
10901697
Filing Dt:
07/29/2004
Publication #:
Pub Dt:
02/02/2006
Inventors:
Duofeng Yue, Peijun J. Chen, Jiong-Ping Lu, Thomas D. Bonifield, Noel M. Russell
Title:
Method for reducing metal silicide excessive encroachment defects in the manufacture of a semiconductor device having silicided source/drain regions
Assignment: 1
Reel/Frame:
015644/0117Recorded: 07/29/2004Pages: 4
Conveyance:
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Assignors:
Exec Dt:
07/29/2004
Exec Dt:
07/29/2004
Exec Dt:
07/29/2004
Exec Dt:
07/29/2004
Exec Dt:
07/29/2004
Assignee:
P.O. BOX 655474
MS 3999
DALLAS, TEXAS 75265
Correspondent:
TEXAS INSTRUMENTS INCORPORATED
GREG H. PARKER
P.O. BOX 655474
MS 3999
DALLAS, TX 75265

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