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Patent Assignment Abstract of Title
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Total Assignments: 2
Patent #:
NONE
Issue Dt:
Application #:
11147075
Filing Dt:
06/06/2005
Publication #:
Pub Dt:
12/07/2006
Inventor:
Fwu-Iuan Hshieh
Title:
Source contact and metal scheme for high density trench MOSFET
Assignment: 1
Reel/Frame:
016677/0388Recorded: 06/06/2005Pages: 2
Conveyance:
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Assignor:
Exec Dt:
06/01/2005
Assignee:
1 SILICON DRIVE
SAMA JAYA FREE INDUSTRIAL ZONE
93350 KUCHING, SARAWAK, MALAYSIA
Correspondent:
BO-IN LIN
13445 MANDOLI DRIVE
LOS ALTOS HILLS, CA 94022
Assignment: 2
Reel/Frame:
021245/0247Recorded: 07/16/2008Pages: 3
Conveyance:
CORRECTIVE ASSIGNMENT TO CORRECT THE ASSIGNEE PREVIOUSLY RECORDED ON REEL 016677 FRAME 0388. ASSIGNOR(S) HEREBY CONFIRMS THE TO CORRECT THE ASSIGNEE FROM "M-MOS SDN. BHD." TO "M-MOS SEMICONDUCTOR SDN. BHD.".
Assignor:
Exec Dt:
06/01/2005
Assignee:
1 SILICON DRIVE, SAMA JAYA FREE INDUSTRIAL ZONE
93350 KUCHING, SARAWAK, MALAYSIA
Correspondent:
BO-IN LIN
13445 MANDOLI DRIVE
LOS ALTOS HILLS, CA 94022

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